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10TH•Physics•Electronics•PN Junction and Semiconductor Diode

19.2 PN Junction and Semiconductor Diode

PN junction, depletion region, forward and reverse bias, and I-V characteristics.

19.2 PN Junction and Semiconductor Diode

When an N-type and a P-type semiconductor are joined together, they form a PN junction semiconductor diode. At the junction, electrons from the N-side and holes from the P-side recombine, creating a region without free charge carriers called the depletion region. This region acts as a barrier that prevents further movement of charges. To allow current to flow, an external voltage is applied to overcome this barrier. For silicon-based diodes, the required voltage is about 0.7 V, and for germanium-based diodes, it is about 0.3 V.

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A diode is like a one-way road for current — allowing it to flow in only one direction and blocking it in the opposite direction.

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